HUAYI · FETs & Power MOSFETs · MPN HYG010N06NS1TA
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| Output Capacitance(Coss) | 4.426nF |
|---|---|
| Pd - Power Dissipation | 428.5W |
| Drain to Source Voltage | 60V |
| Configuration | - |
| Gate Charge(Qg) | 200nC |
| Current - Continuous Drain(Id) | - |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Reverse Transfer Capacitance (Crss@Vds) | 112pF |
| RDS(on) | 0.75mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 14.65nF |
428.5W 60V 3V 0.75mΩ@10V 1 N-channel N-Channel TOLL-8 Single FETs, MOSFETs RoHS