HUAYI · FETs & Power MOSFETs · MPN HYG009N04LS1C2
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| Configuration | - |
|---|---|
| Gate Charge(Qg) | 89nC@10V |
| Drain to Source Voltage | 40V |
| Output Capacitance(Coss) | 1.278nF |
| Current - Continuous Drain(Id) | 200A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 75W |
| Reverse Transfer Capacitance (Crss@Vds) | 58pF |
| RDS(on) | 1.4mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 5.876nF |
N-Channel 40V 200A 75W Surface Mount PDFN5x6-8L