HUAYI · FETs & Power MOSFETs · MPN HYG007N03LS1C2
No reviews yet — be the first to review HUAYI HYG007N03LS1C2.
| Gate Charge(Qg) | 104nC@10V |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 220A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.4V |
| Pd - Power Dissipation | 75W |
| RDS(on) | 1.2mΩ@4.5V |
| Reverse Transfer Capacitance (Crss@Vds) | 94pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 7.072nF |
| Type | N-Channel |
N-Channel 30V 220A 75W Surface Mount PDFN5x6-8L