HUAYI · FETs & Power MOSFETs · MPN HYG006N04LS1TA
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| Gate Charge(Qg) | 230nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Output Capacitance(Coss) | 3.2nF |
| Current - Continuous Drain(Id) | 600A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | - |
| Pd - Power Dissipation | 428W |
| RDS(on) | 0.75mΩ@4.5V |
| Reverse Transfer Capacitance (Crss@Vds) | 115pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 15.4nF |
| Type | N-Channel |
N-Channel 40V 600A 428W Surface Mount TOLL