HUAYI · FETs & Power MOSFETs · MPN HYG006N04LS1B6
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| Gate Charge(Qg) | 233nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | 530A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.7V |
| Pd - Power Dissipation | 405W |
| Reverse Transfer Capacitance (Crss@Vds) | 182pF |
| RDS(on) | 0.55mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 15.58nF |
N-Channel 40V 530A 405W Surface Mount TO-263-6