HUAYI HY8290P

HUAYI · FETs & Power MOSFETs · MPN HY8290P

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Specifications

Gate Charge(Qg)96nC@10V
Drain to Source Voltage80V
Output Capacitance(Coss)330pF
Current - Continuous Drain(Id)16A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation150W
Reverse Transfer Capacitance (Crss@Vds)230pF
RDS(on)8.5mΩ@10V
Number-
Input Capacitance(Ciss)5nF
TypeN-Channel

Technical details

N-Channel 80V 16A 150W Through Hole TO-220FB-3

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