HUAYI HY5204W

HUAYI · FETs & Power MOSFETs · MPN HY5204W

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Specifications

Gate Charge(Qg)231nC@10V
Drain to Source Voltage40V
Output Capacitance(Coss)2.036nF
Current - Continuous Drain(Id)320A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation348W
Reverse Transfer Capacitance (Crss@Vds)1.293nF
RDS(on)1.6mΩ@10V
Number-
Input Capacitance(Ciss)8.655nF
TypeN-Channel

Technical details

40V 320A 4V 348W 1.6mΩ@10V N-Channel TO-247A-3L Single FETs, MOSFETs RoHS

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