HUAYI · FETs & Power MOSFETs · MPN HY5110W
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| Gate Charge(Qg) | 356nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 1.558nF |
| Current - Continuous Drain(Id) | 316A |
| Operating Temperature - | - |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 500W |
| Reverse Transfer Capacitance (Crss@Vds) | 850pF |
| RDS(on) | 2.5mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 16.465nF |
| Type | - |
100V 316A 4V 500W 2.5mΩ@10V 1 N-channel TO-247A-3L Single FETs, MOSFETs RoHS