HUAYI HY4903P

HUAYI · FETs & Power MOSFETs · MPN HY4903P

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Specifications

Gate Charge(Qg)247nC@10V
Drain to Source Voltage30V
Output Capacitance(Coss)1.236nF
Current - Continuous Drain(Id)290A
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation214W
Reverse Transfer Capacitance (Crss@Vds)762pF
RDS(on)2mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)11.506nF
TypeN-Channel

Technical details

30V 290A 3V 214W 2mΩ@10V 1 N-channel N-Channel TO-220FB Single FETs, MOSFETs RoHS

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