HUAYI · FETs & Power MOSFETs · MPN HY4903B6
No reviews yet — be the first to review HUAYI HY4903B6.
| Gate Charge(Qg) | - |
|---|---|
| Drain to Source Voltage | 30V |
| Output Capacitance(Coss) | 1.226nF |
| Current - Continuous Drain(Id) | 314A |
| Operating Temperature - | - |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 268W |
| Reverse Transfer Capacitance (Crss@Vds) | 826pF |
| RDS(on) | 2.5mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 9.417nF |
| Type | N-Channel |
N-Channel 30V 314A 268W Surface Mount TO-263-6