HUAYI HY4903B

HUAYI · FETs & Power MOSFETs · MPN HY4903B

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Specifications

Gate Charge(Qg)-
Drain to Source Voltage30V
Output Capacitance(Coss)1.236nF
Current - Continuous Drain(Id)290A
Operating Temperature --
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation214W
Reverse Transfer Capacitance (Crss@Vds)762pF
RDS(on)3mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)11.506nF
TypeN-Channel

Technical details

N-Channel 30V 290A 214W Surface Mount TO-263-2L

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