HUAYI HY4504W

HUAYI · FETs & Power MOSFETs · MPN HY4504W

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Specifications

Gate Charge(Qg)197nC@10V
Drain to Source Voltage40V
Output Capacitance(Coss)1.8nF
Current - Continuous Drain(Id)250A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation336W
Reverse Transfer Capacitance (Crss@Vds)614pF
RDS(on)2.4mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)7.276nF
TypeN-Channel

Technical details

N-Channel 40V 250A 336W Through Hole TO-247A-3L

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