HUAYI HY4504B

HUAYI · FETs & Power MOSFETs · MPN HY4504B

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Specifications

Gate Charge(Qg)195nC@10V
Drain to Source Voltage40V
Output Capacitance(Coss)1.863nF
Current - Continuous Drain(Id)250A
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation288W
Reverse Transfer Capacitance (Crss@Vds)682pF
RDS(on)3mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)6.985nF
TypeN-Channel

Technical details

N-Channel 40V 250A 288W Surface Mount TO-263-2L

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