HUAYI HY4306W

HUAYI · FETs & Power MOSFETs · MPN HY4306W

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Specifications

Gate Charge(Qg)171nC@10V
Drain to Source Voltage60V
Output Capacitance(Coss)1.093nF
Current - Continuous Drain(Id)230A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation326W
Reverse Transfer Capacitance (Crss@Vds)558pF
RDS(on)2.8mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)7.406nF
TypeN-Channel

Technical details

N-Channel 60V 230A 326W Through Hole TO-247A-3L

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