HUAYI · FETs & Power MOSFETs · MPN HY4008NA2B
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| Drain to Source Voltage | 80V |
|---|---|
| Gate Charge(Qg) | 161nC@10V |
| Output Capacitance(Coss) | 925pF |
| Current - Continuous Drain(Id) | 200A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 300W |
| Reverse Transfer Capacitance (Crss@Vds) | 580pF |
| RDS(on) | 4mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 7.98nF |
80V 200A 300W Surface Mount TO-263-2L