HUAYI · FETs & Power MOSFETs · MPN HY4008B6
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| Gate Charge(Qg) | 209nC@10V |
|---|---|
| Drain to Source Voltage | 80V |
| Current - Continuous Drain(Id) | 255A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 375W |
| Reverse Transfer Capacitance (Crss@Vds) | 822pF |
| RDS(on) | 3.2mΩ@10V |
| Number | - |
| Input Capacitance(Ciss) | 7.457nF |
| Type | N-Channel |
80V 255A 4V 375W 3.2mΩ@10V N-Channel TO-263-6 Single FETs, MOSFETs RoHS