HUAYI · FETs & Power MOSFETs · MPN HY4008B
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| Gate Charge(Qg) | 197nC@10V |
|---|---|
| Drain to Source Voltage | 80V |
| Output Capacitance(Coss) | 1.029nF |
| Current - Continuous Drain(Id) | 200A |
| Operating Temperature - | - |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 345W |
| Reverse Transfer Capacitance (Crss@Vds) | 650pF |
| RDS(on) | 3.5mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 8.154nF |
| Type | N-Channel |
N-Channel 80V 200A 345W Surface Mount TO-263-2L