HUAYI · FETs & Power MOSFETs · MPN HY4004P
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| Gate Charge(Qg) | 158nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Output Capacitance(Coss) | 1.465nF |
| Current - Continuous Drain(Id) | 208A |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 217W |
| Reverse Transfer Capacitance (Crss@Vds) | 596pF |
| RDS(on) | 3.2mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 5.712nF |
| Type | N-Channel |
40V 208A 4V 217W 3.2mΩ@10V 1 N-channel N-Channel TO-220FB Single FETs, MOSFETs RoHS