HUAYI · FETs & Power MOSFETs · MPN HY4004A
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| Gate Charge(Qg) | 158nC |
|---|---|
| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | 208A |
| Operating Temperature - | -40℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 268W |
| Reverse Transfer Capacitance (Crss@Vds) | 596pF |
| RDS(on) | 3mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 5.7nF |
| Type | N-Channel |
N-Channel 40V 208A 268W Through Hole TO-3P-3