HUAYI HY3906P

HUAYI · FETs & Power MOSFETs · MPN HY3906P

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Specifications

Gate Charge(Qg)135nC@10V
Drain to Source Voltage60V
Output Capacitance(Coss)1.014nF
Current - Continuous Drain(Id)190A
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation220W
Reverse Transfer Capacitance (Crss@Vds)506pF
RDS(on)4mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)5.726nF
TypeN-Channel

Technical details

N-Channel 60V 190A 220W Through Hole TO-220FB

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