HUAYI · FETs & Power MOSFETs · MPN HY3810B
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| Gate Charge(Qg) | 185nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 1.013nF |
| Current - Continuous Drain(Id) | 180A |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 346W |
| Reverse Transfer Capacitance (Crss@Vds) | 631pF |
| RDS(on) | 6.5mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 7.889nF |
| Type | N-Channel |
N-Channel 100V 180A 346W Surface Mount TO-263-2L