HUAYI HY3708P

HUAYI · FETs & Power MOSFETs · MPN HY3708P

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Specifications

Gate Charge(Qg)152nC@10V
Drain to Source Voltage80V
Output Capacitance(Coss)995pF
Current - Continuous Drain(Id)170A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation288W
Reverse Transfer Capacitance (Crss@Vds)530pF
RDS(on)5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)6.109nF
TypeN-Channel

Technical details

N-Channel 80V 170A 288W Through Hole TO-220FB-3

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