HUAYI HY3708B

HUAYI · FETs & Power MOSFETs · MPN HY3708B

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Specifications

Drain to Source Voltage80V
Gate Charge(Qg)152nC@10V
Output Capacitance(Coss)995pF
Current - Continuous Drain(Id)170A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation288W
RDS(on)5mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)530pF
Number1 N-channel
Input Capacitance(Ciss)6.109nF
TypeN-Channel

Technical details

N-Channel 80V 170A 288W Surface Mount TO-263-2L

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