HUAYI · FETs & Power MOSFETs · MPN HY3704P
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| Gate Charge(Qg) | 122nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Output Capacitance(Coss) | 1.028nF |
| Current - Continuous Drain(Id) | 176A |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 192W |
| Reverse Transfer Capacitance (Crss@Vds) | 538pF |
| RDS(on) | 3.6mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 4.427nF |
| Type | N-Channel |
40V 176A 4V 192W 3.6mΩ@10V 1 N-channel N-Channel TO-220FB-3L Single FETs, MOSFETs RoHS