HUAYI · FETs & Power MOSFETs · MPN HY3704B
No reviews yet — be the first to review HUAYI HY3704B.
| Gate Charge(Qg) | 122nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | 176A |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 192W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 3.6mΩ@10V |
| Number | - |
| Input Capacitance(Ciss) | - |
| Type | N-Channel |
40V 176A 4V 192W 3.6mΩ@10V N-Channel TO-263-2 Single FETs, MOSFETs RoHS