HUAYI · FETs & Power MOSFETs · MPN HY3606P
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| Gate Charge(Qg) | 130nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Output Capacitance(Coss) | 857pF |
| Current - Continuous Drain(Id) | 162A |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 214W |
| Reverse Transfer Capacitance (Crss@Vds) | 334pF |
| RDS(on) | 4.5mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 4.376nF |
| Type | N-Channel |
60V 162A 4V 214W 4.5mΩ@10V 1 N-channel N-Channel TO-220FB-3 Single FETs, MOSFETs RoHS