HUAYI · FETs & Power MOSFETs · MPN HY3606B
No reviews yet — be the first to review HUAYI HY3606B.
| Gate Charge(Qg) | 130nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Output Capacitance(Coss) | 857pF |
| Current - Continuous Drain(Id) | 162A |
| Operating Temperature - | - |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 214W |
| Reverse Transfer Capacitance (Crss@Vds) | 334pF |
| RDS(on) | 4.5mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 4.376nF |
| Type | N-Channel |
60V 162A 214W Surface Mount TO-263-2L