HUAYI · FETs & Power MOSFETs · MPN HY3503C2
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| Gate Charge(Qg) | 100nC@10V |
|---|---|
| Drain to Source Voltage | 30V |
| Output Capacitance(Coss) | 541pF |
| Current - Continuous Drain(Id) | 150A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 156W |
| Reverse Transfer Capacitance (Crss@Vds) | 153pF |
| RDS(on) | 2.5mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 4.9nF |
| Type | N-Channel |
30V 150A 3V 156W 2.5mΩ@10V 1 N-channel N-Channel PPAK-8L(5x6) Single FETs, MOSFETs RoHS