HUAYI · FETs & Power MOSFETs · MPN HY3410P
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| Gate Charge(Qg) | 130nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 943pF |
| Current - Continuous Drain(Id) | 140A |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 285W |
| Reverse Transfer Capacitance (Crss@Vds) | 490pF |
| RDS(on) | 7.5mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 6.14nF |
| Type | N-Channel |
100V 140A 4V 285W 7.5mΩ@10V 1 N-channel N-Channel TO-220FB Single FETs, MOSFETs RoHS