HUAYI HY3215W

HUAYI · FETs & Power MOSFETs · MPN HY3215W

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Specifications

Drain to Source Voltage150V
Gate Charge(Qg)135nC@10V
Output Capacitance(Coss)480pF
Current - Continuous Drain(Id)130A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))5V
Pd - Power Dissipation349W
RDS(on)14mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)194pF
Number1 N-channel
Input Capacitance(Ciss)5.925nF
TypeN-Channel

Technical details

N-Channel 150V 130A 349W Through Hole TO-247A-3L

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