HUAYI · FETs & Power MOSFETs · MPN HY3010D
No reviews yet — be the first to review HUAYI HY3010D.
| Gate Charge(Qg) | 81nC |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 361pF |
| Current - Continuous Drain(Id) | 60A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 65W |
| RDS(on) | 12mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 230pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.197nF |
| Type | N-Channel |
N-Channel 100V 60A 65W Surface Mount TO-252-2L