HUAYI · FETs & Power MOSFETs · MPN HY3010B
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| Gate Charge(Qg) | 100nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 100A |
| Operating Temperature - | - |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 192W |
| Reverse Transfer Capacitance (Crss@Vds) | 260pF |
| RDS(on) | 12mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | - |
| Type | N-Channel |
100V 100A 4V 192W 12mΩ@10V 1 N-channel N-Channel TO-263-2 Single FETs, MOSFETs RoHS