HUAYI HY3008P

HUAYI · FETs & Power MOSFETs · MPN HY3008P

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Specifications

Gate Charge(Qg)67nC@10V
Drain to Source Voltage80V
Output Capacitance(Coss)440pF
Current - Continuous Drain(Id)100A
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation200W
Reverse Transfer Capacitance (Crss@Vds)199pF
RDS(on)8.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3.15nF
TypeN-Channel

Technical details

N-Channel 80V 100A 200W Through Hole TO-220FB

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