HUAYI HY3008B

HUAYI · FETs & Power MOSFETs · MPN HY3008B

No reviews yet — be the first to review HUAYI HY3008B.

Specifications

Drain to Source Voltage80V
Output Capacitance(Coss)440pF
Current - Continuous Drain(Id)100A
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation200W
Reverse Transfer Capacitance (Crss@Vds)199pF
RDS(on)8.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3.15nF
TypeN-Channel

Technical details

80V 100A 4V 200W 8.5mΩ@10V 1 N-channel N-Channel TO-263-2 Single FETs, MOSFETs RoHS

Related FETs & Power MOSFETs