HUAYI HY3003D

HUAYI · FETs & Power MOSFETs · MPN HY3003D

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Specifications

Gate Charge(Qg)26nC@10V
Drain to Source Voltage30V
Output Capacitance(Coss)292pF
Current - Continuous Drain(Id)100A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation67.6W
Reverse Transfer Capacitance (Crss@Vds)232pF
RDS(on)4.5mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)2.57nF
TypeN-Channel

Technical details

N-Channel 30V 100A 67.6W Surface Mount TO-252-2L

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