HUAYI HY1920W

HUAYI · FETs & Power MOSFETs · MPN HY1920W

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Specifications

Drain to Source Voltage200V
Current - Continuous Drain(Id)90A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation375W
Reverse Transfer Capacitance (Crss@Vds)165pF
RDS(on)25mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)5.871nF
TypeN-Channel

Technical details

N-Channel 200V 90A 375W Through Hole TO-247A-3L

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