HUAYI · FETs & Power MOSFETs · MPN HY1920B
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| Gate Charge(Qg) | 127nC@10V |
|---|---|
| Drain to Source Voltage | 200V |
| Current - Continuous Drain(Id) | 72A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.8V |
| Pd - Power Dissipation | 268W |
| RDS(on) | 22mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 257pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 5.558nF |
N-Channel 200V 72A 268W Surface Mount TO-263-2L