HUAYI · FETs & Power MOSFETs · MPN HY1915P
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| Gate Charge(Qg) | 103nC@10V |
|---|---|
| Drain to Source Voltage | 150V |
| Output Capacitance(Coss) | 384pF |
| Current - Continuous Drain(Id) | 85A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 5V |
| Pd - Power Dissipation | 263W |
| Reverse Transfer Capacitance (Crss@Vds) | 161pF |
| RDS(on) | 18mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 5.125nF |
| Type | N-Channel |
150V 85A 5V 263W 18mΩ@10V 1 N-channel N-Channel TO-220FB-3L Single FETs, MOSFETs RoHS