HUAYI · FETs & Power MOSFETs · MPN HY1908D
No reviews yet — be the first to review HUAYI HY1908D.
| Gate Charge(Qg) | 84nC@10V |
|---|---|
| Drain to Source Voltage | 80V |
| Output Capacitance(Coss) | 365pF |
| Current - Continuous Drain(Id) | 90A |
| Operating Temperature - | - |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 64W |
| Reverse Transfer Capacitance (Crss@Vds) | 239pF |
| RDS(on) | 9mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.864nF |
| Type | N-Channel |
N-Channel 80V 90A 64W Surface Mount TO-252-2L