HUAYI · FETs & Power MOSFETs · MPN HY1906D
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| Gate Charge(Qg) | 104nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Output Capacitance(Coss) | 405pF |
| Current - Continuous Drain(Id) | 70A |
| Operating Temperature - | - |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 62.5W |
| Reverse Transfer Capacitance (Crss@Vds) | 274pF |
| RDS(on) | 7mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 4.6nF |
| Type | N-Channel |
N-Channel 60V 70A 62.5W Surface Mount TO-252