HUAYI · FETs & Power MOSFETs · MPN HY1906C2
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| Gate Charge(Qg) | 102nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 70A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | - |
| Pd - Power Dissipation | 57.7W |
| RDS(on) | 6.5mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 360pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 4.62nF |
| Type | N-Channel |
60V 70A 57.7W 6.5mΩ@10V 1 N-channel N-Channel DFN-8(5.8x5.9) Single FETs, MOSFETs RoHS