HUAYI · FETs & Power MOSFETs · MPN HY1904C2
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| Drain to Source Voltage | 40V |
|---|---|
| Current - Continuous Drain(Id) | 65A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 48W |
| Reverse Transfer Capacitance (Crss@Vds) | 195pF |
| RDS(on) | 7mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.391nF |
| Type | N-Channel |
N-Channel 40V 65A 48W Surface Mount PPAK-8L(5x6)