HUAYI · FETs & Power MOSFETs · MPN HY1804P
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| Gate Charge(Qg) | 86.2nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | 110A |
| Operating Temperature - | - |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 125W |
| Reverse Transfer Capacitance (Crss@Vds) | 239.8pF |
| RDS(on) | 5.5mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 4.1756nF |
| Type | N-Channel |
40V 110A 3V 125W 5.5mΩ@4.5V 1 N-channel N-Channel TO-220FB-3L Single FETs, MOSFETs RoHS