HUAYI · FETs & Power MOSFETs · MPN HY1803C2
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| Gate Charge(Qg) | 120nC@10V |
|---|---|
| Drain to Source Voltage | 30V |
| Output Capacitance(Coss) | 469pF |
| Current - Continuous Drain(Id) | 80A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 52W |
| Reverse Transfer Capacitance (Crss@Vds) | 322pF |
| RDS(on) | 3.5mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 4.726nF |
| Type | N-Channel |
30V 80A 3V 52W 3.5mΩ@4.5V 1 N-channel N-Channel PPAK-8L(5x6) Single FETs, MOSFETs RoHS