HUAYI HY1720W

HUAYI · FETs & Power MOSFETs · MPN HY1720W

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Specifications

Gate Charge(Qg)102nC
Drain to Source Voltage200V
Output Capacitance(Coss)206pF
Current - Continuous Drain(Id)64A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))5V
Pd - Power Dissipation263W
RDS(on)32mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)120pF
Number1 N-channel
Input Capacitance(Ciss)4.816nF
TypeN-Channel

Technical details

N-Channel 200V 64A 263W Through Hole TO-247A-3L

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