HUAYI HY1710P

HUAYI · FETs & Power MOSFETs · MPN HY1710P

No reviews yet — be the first to review HUAYI HY1710P.

Specifications

Gate Charge(Qg)94nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)273pF
Current - Continuous Drain(Id)70A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation150W
Reverse Transfer Capacitance (Crss@Vds)190pF
RDS(on)18mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)4.2nF
TypeN-Channel

Technical details

N-Channel 100V 70A 150W Through Hole TO-220FB

Related FETs & Power MOSFETs