HUAYI HY1707P

HUAYI · FETs & Power MOSFETs · MPN HY1707P

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Specifications

Drain to Source Voltage70V
Gate Charge(Qg)88nC@10V
Output Capacitance(Coss)900pF
Current - Continuous Drain(Id)80A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation178W
Reverse Transfer Capacitance (Crss@Vds)280pF
RDS(on)7mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)4.55nF
TypeN-Channel

Technical details

N-Channel 70V 80A 178W Through Hole TO-220FB

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