HUAYI · FETs & Power MOSFETs · MPN HY1606D
No reviews yet — be the first to review HUAYI HY1606D.
| Gate Charge(Qg) | 51nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Output Capacitance(Coss) | 760pF |
| Current - Continuous Drain(Id) | 66A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 64W |
| Reverse Transfer Capacitance (Crss@Vds) | 370pF |
| RDS(on) | 12.5mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.04nF |
| Type | N-Channel |
N-Channel 60V 66A 64W Surface Mount TO-252-2L