HUAYI HY1603P

HUAYI · FETs & Power MOSFETs · MPN HY1603P

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Specifications

Gate Charge(Qg)-
Drain to Source Voltage30V
Output Capacitance(Coss)702pF
Current - Continuous Drain(Id)62A
Operating Temperature --
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation36W
Reverse Transfer Capacitance (Crss@Vds)264pF
RDS(on)5.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.623nF
TypeN-Channel

Technical details

30V 62A 2.5V 36W 5.5mΩ@10V 1 N-channel N-Channel TO-220FB Single FETs, MOSFETs RoHS

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