HUAYI · FETs & Power MOSFETs · MPN HY1603C2
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| Gate Charge(Qg) | 52nC@10V |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 88A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 35.7W |
| Reverse Transfer Capacitance (Crss@Vds) | 158pF |
| RDS(on) | 6.5mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.312nF |
| Type | N-Channel |
N-Channel 30V 88A 35.7W Surface Mount PPAK-8L(5x6)